N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances

HiPerFET™ Power MOSFETs ISOPLUS247™ Q CLASS (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface

文件：33.66 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs ISOPLUS247 Q CLASS

HiPerFET™ Power MOSFETs ISOPLUS247™ Q CLASS (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface

文件：160.52 Kbytes 页数：2 Pages

IXYS

艾赛斯

N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances

Littelfuse

力特

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family

Features • International standard package • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Applications • DC-DC converters • Synchronou

文件：556.28 Kbytes 页数：4 Pages

IXYS

艾赛斯

HiPerFETTM Power MOSFETs Q Class

Features ● IXYS advanced low Qg process ● Low gate charge and capacitances - easier to drive - faster switching ● International standard packages ● Low RDS (on) ● Unclamped Inductive Switching (UIS) rated ● Molding epoxies meet UL 94 V-0 flammability classification Advantages ●

文件：146.65 Kbytes 页数：4 Pages

IXYS

艾赛斯

Polar Power MOSFET HiPerFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard packages • Fast recovery diode • Avalanche rated • Low package inductance Advantages • Easy to mount • Space savings • High power density Applications: • Switched-mode and resonant-mode pow

文件：183.7 Kbytes 页数：4 Pages

IXYS

艾赛斯