IXFR27N80Q资料datasheet下载库存现货IXYS-114ic电子网

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IXFR27N80Q	文件：55.88 Kbytes Page：2 Pages	HiPerFET Power MOSFETs Q-CLASS SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated,LowQg,HighdV/dt,Lowtrr Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •RatedforunclampedInducti	IXYS IXYS Integrated Circuits Division	IXYS
IXFK27N80	文件：162.51 Kbytes Page：4 Pages	HiPerFETTMPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilic	IXYS IXYS Integrated Circuits Division	IXYS
IXFK27N80	文件：157.32 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs	IXYS IXYS Integrated Circuits Division	IXYS
IXFK27N80	文件：168.09 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilic	IXYS IXYS Integrated Circuits Division	IXYS
IXFK27N80	文件：328.55 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK27N80Q	文件：329.28 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK27N80Q	文件：55.88 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-CLASS SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated,LowQg,HighdV/dt,Lowtrr Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •RatedforunclampedInducti	IXYS IXYS Integrated Circuits Division	IXYS
IXFN27N80	文件：168.09 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilic	IXYS IXYS Integrated Circuits Division	IXYS
IXFN27N80	文件：157.32 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs	IXYS IXYS Integrated Circuits Division	IXYS
IXFN27N80	文件：162.51 Kbytes Page：4 Pages	HiPerFETTMPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilic	IXYS IXYS Integrated Circuits Division	IXYS
IXFN27N80Q	文件：108.43 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-Class SingleDieMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackage •EpoxymeetUL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •IXYSadvancedlowQgprocess •Ruggedpolysilicongatecellstructure	IXYS IXYS Integrated Circuits Division	IXYS
IXFR27N80	文件：330.29 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=27A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=300mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFX27N80	文件：368.06 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFX27N80Q	文件：55.88 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-CLASS SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated,LowQg,HighdV/dt,Lowtrr Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •RatedforunclampedInducti	IXYS IXYS Integrated Circuits Division	IXYS
IXFX27N80Q	文件：96.66 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-CLASS	IXYS IXYS Integrated Circuits Division	IXYS

详细参数

型号：
IXFR27N80Q
功能描述：
MOSFET 27 Amps 800V 0.35W Rds
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	IXFR27N80Q	IXYS	24+	ISOPLUS247?	30000	晶体管-分立半导体产品-原装正品	询价
深圳市永贝尔科技有限公司	IXFR27N80Q	IXYS	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
中科航电(深圳)半导体技术有限公司	IXFR27N80Q	IXYS	2019+	ISOPLUS247?	65500	原装正品货到付款,价格优势!	询价
深圳市宏捷佳电子科技有限公司	IXFR27N80Q	IXYS	23+	ISOPLUS24	12300	全新原装真实库存含13点增值税票!	询价
瀚佳科技(深圳)有限公司	IXFR27N80Q	IXYS	18+	TO-247	2050	公司大量全新原装正品随时可以发货	询价
深圳市艾宇欣科技有限公司	IXFR27N80Q	IXYS	1931+	N/A	18	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市科雨电子有限公司	IXFR27N80Q	IXYS	1809+	TO-247	326	就找我吧!--邀您体验愉快问购元件!	询价
深圳市国宇半导体科技有限公司	IXFR27N80Q	IXYS/艾赛斯	23+	ISOPLUS247	10000	公司只做原装正品	询价
深圳市易讯博科技有限公司	IXFR27N80Q	IXYS	22+	NA	18	加我QQ或微信咨询更多详细信息,	询价
深圳市河锋鑫科技有限公司	IXFR27N80Q	IXYS	22+	ISOPLUS247?	9000	原厂渠道,现货配单	询价

更多IXFR27N80Q供应商更新时间2024-5-29 17:16:00

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