N通道HiPerFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特

PolarHV HiPerFET Power MOSFET

文件：149.82 Kbytes 页数：4 Pages

IXYS

艾赛斯

PolarHV HiPerFET Power MOSFET

文件：274.33 Kbytes 页数：4 Pages

IXYS

艾赛斯

N-Channel MOSFET, FRFET

文件：269.28 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 34.9A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 95mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：347.97 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel SupreMOS짰 MOSFET 600 V, 36 A, 90 m廓

Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on

文件：239.62 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体