N通道沟槽栅 Gen2 MOSFET

• 高电流性能（高达600A）\n• 较低的RDS(ON) 和栅极电荷(Qg)\n• Incorporates Littelfuse HiPerFETTM technology for fast power switching 性能\n• 雪崩功能;

Littelfuse

力特

GigaMOS TrenchT2 HiperFET Power MOSFET

文件：190.97 Kbytes 页数：6 Pages

IXYS

艾赛斯

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 320A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 5.2mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · Battery Chargers · Uninterruptible Power Supplies

文件：307.45 Kbytes 页数：2 Pages

ISC

无锡固电

GigaMOS TrenchT2 HiperFET Power MOSFET

文件：190.97 Kbytes 页数：6 Pages

IXYS

艾赛斯

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 260A@ TC=25℃ · Drain Source Voltage -VDSS= 170V(Min) · Static Drain-Source On-Resistance -RDS(on) = 5.2mΩ(Max)@VGS= 10V APPLICATIONS · Motor Drive, DC-DC Converter, Power Switch and Solenoid Drive.

文件：572.37 Kbytes 页数：3 Pages

ISC

无锡固电