HiperFETTM Power MOSFETs Q3-Class

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = 500V ID25 = 44A RDS(on) ≤140mΩ trr ≤250ns Features Low Intrinsic Gate Resistance International Standard Packages Low Package Inductance Fast Intrinsic Rectifier Low RDS(on)and QG

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IXYS

艾赛斯

N通道HiPerFET

• 每个硅片面积的Rdson较低\n• 较低的Qg和Qgd\n• 卓越的dV/dt性能\n• 高速开关\n• 快速本征整流器\n• 较低的本征栅极电阻\n• 较高的雪崩能量性能\n• 卓越的热性能;

Littelfuse

力特

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 44A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 140mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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ISC

无锡固电

HiperFETTM Power MOSFETs Q3-Class

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = 500V ID25 = 44A RDS(on) ≤140mΩ trr ≤250ns Features Low Intrinsic Gate Resistance International Standard Packages Low Package Inductance Fast Intrinsic Rectifier Low RDS(on)and QG

文件：138.42 Kbytes 页数：5 Pages

IXYS

艾赛斯

Preliminary Technical Information

N-Channel Enhancement Mode Fast Intrinsic Rectifier VDSS = 500V ID25 = 25A RDS(on) ≤154mΩ trr ≤250ns Features Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface Low Intrinsic Gate Resistance 2500V~ Electrical Isolation Fast Intrinsic Rect

文件：154.73 Kbytes 页数：5 Pages

IXYS

艾赛斯