N通道沟槽栅 Gen1 MOSFET

• 国际标准包装\n• 低RDS(ON)\n• 雪崩评级\n• 高电流处理能力\n• 快速本征整流器;

Littelfuse

力特

GigaMOS Power MOSFET

文件：144.73 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 230A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =7.5mΩ,Typ. ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

文件：351.95 Kbytes 页数：3 Pages

ISC

无锡固电

GigaMOS Power MOSFET

文件：144.73 Kbytes 页数：5 Pages

IXYS

艾赛斯

GigaMOS Power MOSFET

GigaMOS Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Package • miniBLOC, with Aluminium Nitride Isolation • Isolation voltage 2500 V~ • High Current Handling Capability • Fast Intrinsic Diode • Avalanche Rated • Low RDS(o

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IXYS

艾赛斯