Avalanche Rated Fast Instrinsic Diode

VDSS = 500 V ID25 = 26 A RDS(on) ≤ 230 mΩ trr ≤ 200 ns Avalanche Rated Fast Instrinsic Diode Features ● International standard packages ● Fast intrinsic diode ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect Advantages ● Easy to mou

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IXYS

艾赛斯

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types\n;

Littelfuse

力特

PolarHV Power MOSFET

Electrically Isolated Tab, N-Channel Enhancement Mode, Avalanche Rated Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance( Applications DC-DC converters

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IXYS

艾赛斯

isc N-Channel MOSFET Transistor

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ISC

无锡固电

PolarHVTM Power MOSFET

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IXYS

艾赛斯