PolarHV Power MOSFET

Electrically Isolated Tab, N-Channel Enhancement Mode, Avalanche Rated Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance( Applications DC-DC converters

文件：571.66 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

文件：296.32 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

Littelfuse

力特

PolarHVTM Power MOSFET

文件：343.91 Kbytes 页数：5 Pages

IXYS

艾赛斯

PolarHV Power MOSFET

文件：343.91 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

文件：269.8 Kbytes 页数：2 Pages

ISC

无锡固电