Polar Power MOSFET HiPerFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode Features • International Standard Packages • Fast Intrinsic Diode • Avalanche Rated • Low Package Inductance Advantages • Easy to Mount • Space Savings • High Power Density Applications • Switched-Mode and Resonant-Mode Powe

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IXYS

艾赛斯

N通道HiPerFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特

High Current MegaMOSFET

High Current MegaMOS™ FET N-Channel Enhancement Mode Features • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • International standard package • Fast switching times Applications • Motor controls • DC choppers • Switched-mode power supplies Advantages • Easy to

文件：85.69 Kbytes 页数：2 Pages

IXYS

艾赛斯

High Current MegaMOS FET

文件：584.25 Kbytes 页数：5 Pages

IXYS

艾赛斯

PolarHT Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Features • International standard package • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

文件：161.98 Kbytes 页数：5 Pages

IXYS

艾赛斯