GigaMOS Power MOSFET

GigaMOS™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • High Current Handling Capability • Fast Intrinsic Diode • Avalanche Rated • Low RDS(on) Advantages • Easy to Mount • Space Savings • High Power Density A

文件：144.79 Kbytes 页数：5 Pages

IXYS

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N通道沟槽栅 Gen1 MOSFET

• 国际标准包装\n• 低RDS(ON)\n• 雪崩评级\n• 高电流处理能力\n• 快速本征整流器;

Littelfuse

力特

N-Channel Super Trench Power MOSFET

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RECTRON

丽正国际

300V PDP IGBT

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FAIRCHILD

仙童半导体

300V, 120A PDP IGBT

文件：885.31 Kbytes 页数：7 Pages

FAIRCHILD

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isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current : ID= 120A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 25mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·motor drive, D

文件：367.15 Kbytes 页数：2 Pages

ISC

无锡固电