IXFH120N30

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainCurrent:ID=120A@TC=25℃ ·DrainSourceVoltage :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=25mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·motordrive,D

IXFH120N30X3

N-Channel Enhancement Mode Avalanche Rated

FGA120N30D

300VPDPIGBT

FGPF120N30

300V,120APDPIGBT

IXFK120N30T

GigaMOSPowerMOSFET

GigaMOS™PowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •HighCurrentHandlingCapability •FastIntrinsicDiode •AvalancheRated •LowRDS(on) Advantages •EasytoMount •SpaceSavings •HighPowerDensity A

IXFX120N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=27mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive ·ACMotorDrives ·BatteryCharges

IXFX120N30T

GigaMOSPowerMOSFET

GigaMOS™PowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •HighCurrentHandlingCapability •FastIntrinsicDiode •AvalancheRated •LowRDS(on) Advantages •EasytoMount •SpaceSavings •HighPowerDensity A

RM120N30DF

N-ChannelSuperTrenchPowerMOSFET