首页 >IXFH12N90Q>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
IXFH12N90Q | HiPerFET Power MOSFETs Q Class Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages | IXYS IXYS Integrated Circuits Division | IXYS | |
IXFH12N90Q | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
12A,900VN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETs
| IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarPowerMOSFETHiPerFET Polar™HiPerFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •LowPackageInductance •FastIntrinsicDiode Advantages •EasytoMount •SpaceSavings •HighPowerDensity Applications: •Sw | IXYS IXYS Integrated Circuits Division | IXYS | ||
PowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETs
| IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETsQClass Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages | IXYS IXYS Integrated Circuits Division | IXYS | ||
PowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarPowerMOSFETHiPerFET Polar™HiPerFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •LowPackageInductance •FastIntrinsicDiode Advantages •EasytoMount •SpaceSavings •HighPowerDensity Applications: •Sw | IXYS IXYS Integrated Circuits Division | IXYS | ||
PowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarPowerMOSFETHiPerFET Polar™HiPerFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •LowPackageInductance •FastIntrinsicDiode Advantages •EasytoMount •SpaceSavings •HighPowerDensity Applications: •Sw | IXYS IXYS Integrated Circuits Division | IXYS | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFASTIGBTLightspeedSeries Features •VeryhighfrequencyIGBT •NewgenerationHDMOSTMprocess •InternationalstandardpackageJEDECTO-247 •Highpeakcurrenthandlingcapability Applications •PFCcircuit •ACmotorspeedcontrol •DCservoandrobotdrives •Switch-modeandresonant-modepowersupplies •High | IXYS IXYS Integrated Circuits Division | IXYS |
详细参数
- 型号:
IXFH12N90Q
- 功能描述:
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 12A I(D) | TO-268
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
23+ |
TO-247 |
52388 |
原装正品 华强现货 |
询价 | ||
IXYS |
22+ |
TO-247 |
32350 |
原装正品 假一罚十 公司现货 |
询价 | ||
IXYS/艾赛斯 |
22+ |
TO-247 |
6000 |
十年配单,只做原装 |
询价 | ||
IXYS |
21+ |
TO-247 |
56000 |
公司进口原装现货 批量特价支持 |
询价 | ||
IXYS/IXYS Integrated Circuits |
21+ |
TO-247 |
179 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-247 |
6000 |
原装正品,支持实单 |
询价 | ||
ixys |
2023+ |
TO-247 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
isc |
2024 |
TO-247 |
150 |
国产品牌isc,可替代原装 |
询价 | ||
IXYS |
TO-247 |
6000 |
原装现货,长期供应,终端可账期 |
询价 | |||
IXYS/艾赛斯 |
22+ |
TO-247 |
25000 |
只做原装进口现货,专注配单 |
询价 |
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