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IXFH12N90Q

HiPerFET Power MOSFETs Q Class

Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages

IXYS

IXYS Integrated Circuits Division

IXFH12N90Q

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

12N90

12A,900VN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

12N90

FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH12N90

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH12N90

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Integrated Circuits Division

IXFH12N90

HiPerFETPowerMOSFETs

IXYS

IXYS Integrated Circuits Division

IXFH12N90P

PolarPowerMOSFETHiPerFET

Polar™HiPerFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •LowPackageInductance •FastIntrinsicDiode Advantages •EasytoMount •SpaceSavings •HighPowerDensity Applications: •Sw

IXYS

IXYS Integrated Circuits Division

IXFH12N90P

PowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFH12N90P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFM12N90

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFM12N90

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Integrated Circuits Division

IXFM12N90

HiPerFETPowerMOSFETs

IXYS

IXYS Integrated Circuits Division

IXFT12N90Q

HiPerFETPowerMOSFETsQClass

Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages

IXYS

IXYS Integrated Circuits Division

IXFV12N90P

PowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFV12N90P

PolarPowerMOSFETHiPerFET

Polar™HiPerFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •LowPackageInductance •FastIntrinsicDiode Advantages •EasytoMount •SpaceSavings •HighPowerDensity Applications: •Sw

IXYS

IXYS Integrated Circuits Division

IXFV12N90PS

PowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFV12N90PS

PolarPowerMOSFETHiPerFET

Polar™HiPerFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •LowPackageInductance •FastIntrinsicDiode Advantages •EasytoMount •SpaceSavings •HighPowerDensity Applications: •Sw

IXYS

IXYS Integrated Circuits Division

IXFZ12N90

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Integrated Circuits Division

IXGH12N90C

HiPerFASTIGBTLightspeedSeries

Features •VeryhighfrequencyIGBT •NewgenerationHDMOSTMprocess •InternationalstandardpackageJEDECTO-247 •Highpeakcurrenthandlingcapability Applications •PFCcircuit •ACmotorspeedcontrol •DCservoandrobotdrives •Switch-modeandresonant-modepowersupplies •High

IXYS

IXYS Integrated Circuits Division

详细参数

  • 型号:

    IXFH12N90Q

  • 功能描述:

    TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 12A I(D) | TO-268

供应商型号品牌批号封装库存备注价格
IXYS/艾赛斯
23+
TO-247
52388
原装正品 华强现货
询价
IXYS
22+
TO-247
32350
原装正品 假一罚十 公司现货
询价
IXYS/艾赛斯
22+
TO-247
6000
十年配单,只做原装
询价
IXYS
21+
TO-247
56000
公司进口原装现货 批量特价支持
询价
IXYS/IXYS Integrated Circuits
21+
TO-247
179
优势代理渠道,原装正品,可全系列订货开增值税票
询价
IXYS/艾赛斯
23+
TO-247
6000
原装正品,支持实单
询价
ixys
2023+
TO-247
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
isc
2024
TO-247
150
国产品牌isc,可替代原装
询价
IXYS
TO-247
6000
原装现货,长期供应,终端可账期
询价
IXYS/艾赛斯
22+
TO-247
25000
只做原装进口现货,专注配单
询价
更多IXFH12N90Q供应商 更新时间2024-5-29 18:46:00