首页 >IXFH20N50P3>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IXFH20N50P3 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
IXFH20N50P3 | Preliminary Technical Information VDSS=500V ID25=20A RDS(on)≤300m N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features FastIntrinsicRectifier AvalancheRated LowRDS(ON)andQG LowPackageInductance Advantages HighPowerDensity EasytoMoun | IXYS IXYS Integrated Circuits Division | IXYS | |
IXFH20N50P3 | Power MOSFET | IXYS IXYS Integrated Circuits Division | IXYS | |
PreliminaryTechnicalInformation VDSS=500V ID25=20A RDS(on)≤300m N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features FastIntrinsicRectifier AvalancheRated LowRDS(ON)andQG LowPackageInductance Advantages HighPowerDensity EasytoMoun | IXYS IXYS Integrated Circuits Division | IXYS | ||
PowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
PreliminaryTechnicalInformation VDSS=500V ID25=20A RDS(on)≤300m N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features FastIntrinsicRectifier AvalancheRated LowRDS(ON)andQG LowPackageInductance Advantages HighPowerDensity EasytoMoun | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelEnhancementModeAvalancheRatedFastIntrinsicRectifier N-ChannelEnhancementModeAvalancheRatedFastIntrinsicRectifier Features •PlasticOvermoldedTabforElectricalIsolation •FastIntrinsicRectifier •AvalancheRated •LowRDS(ON)andQG •LowPackageInductance Advantages •HighPowerDensity •EasytoMount •SpaceSavings Appli | IXYS IXYS Integrated Circuits Division | IXYS | ||
PreliminaryTechnicalInformation VDSS=500V ID25=20A RDS(on)≤300m N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features FastIntrinsicRectifier AvalancheRated LowRDS(ON)andQG LowPackageInductance Advantages HighPowerDensity EasytoMoun | IXYS IXYS Integrated Circuits Division | IXYS | ||
PowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS |
详细参数
- 型号：
IXFH20N50P3
- 功能描述：
MOSFET Polar3 HiPerFET Power MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
23+ |
TO-247AD(IXFH) |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
Littelfuse/IXYS |
23+ |
TO-247 |
7814 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
IXYS |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
IXYS |
2019+ |
TO-247-3 |
65500 |
原装正品货到付款,价格优势! |
询价 | ||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
IXYS/艾赛斯 |
2021+ |
TO247 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
IXYS |
1809+ |
TO-247 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IXYS |
22+ |
NA |
18 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IXYS |
22+ |
TO2473 |
9000 |
原厂渠道,现货配单 |
询价 | ||
只回收 |
21+ROHS |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |
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