PolarP2 HiperFET Power MOSFET

PolarP2™ HiperFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • Fast Intrinsic Rectifier • Avalanche Rated • Low RDS(ON) and QG • Low Package Inductance Advantages • High Power Density • Easy to Mount • Space S

文件：132.74 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 52A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 120mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：371.89 Kbytes 页数：2 Pages

ISC

无锡固电

N通道HiPerFET

• 较低的RDS(on)和Qg\n • 低热阻RthJC\n • 高功率耗散\n • 动态dv/dt额定值\n • 雪崩评级;

Littelfuse

力特

PolarP2 HiperFET Power MOSFET

PolarP2™ HiperFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • Fast Intrinsic Rectifier • Avalanche Rated • Low RDS(ON) and QG • Low Package Inductance Advantages • High Power Density • Easy to Mount • Space S

文件：132.74 Kbytes 页数：4 Pages

IXYS

艾赛斯