Polar3 HiperFET Power MOSFET

VDSS = 500V ID25 = 60A RDS(on) ≤ 100mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • Fast Intrinsic Rectifier • Avalanche Rated • Low RDS(ON) and QG • Low Package Inductance Advantages • High Power Density • Easy to Mount •

文件：173.57 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 38mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：372.43 Kbytes 页数：2 Pages

ISC

无锡固电

N通道HiPerFET

• 超低通态电阻RDS(ON)和栅极电荷Qg\n• 快速体二极管\n• dv/dt强度\n• 雪崩评级\n• 较低的封装电感\n• 国际标准包装;

Littelfuse

力特

Polar3 HiperFET Power MOSFET

VDSS = 500V ID25 = 60A RDS(on) ≤ 100mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • Fast Intrinsic Rectifier • Avalanche Rated • Low RDS(ON) and QG • Low Package Inductance Advantages • High Power Density • Easy to Mount •

文件：173.57 Kbytes 页数：5 Pages

IXYS

艾赛斯

Polar3 HiperFET Power MOSFET

VDSS = 500V ID25 = 60A RDS(on) ≤ 100mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • Fast Intrinsic Rectifier • Avalanche Rated • Low RDS(ON) and QG • Low Package Inductance Advantages • High Power Density • Easy to Mount •

文件：173.57 Kbytes 页数：5 Pages

IXYS

艾赛斯