N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features ● Dynamic dv/dt Rating ● Avalanche Rated ● Fast Intrinsic Diode ● Low QG ● Low RDS(on) ● Low Drain-to-Tab Capacitance ● Low Package Inductance Advantages ● Easy to Mount ● Space Savings Applications ● DC-DC Con

文件：131.82 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 64A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 100mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications

文件：324.58 Kbytes 页数：2 Pages

ISC

无锡固电

N通道HiPerFET

• 超低通态电阻RDS(ON)和栅极电荷Qg\n• 快速体二极管\n• dv/dt强度\n• 雪崩评级\n• 较低的封装电感\n• 国际标准包装;

Littelfuse

力特

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 64A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) =100mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：2.41922 Mbytes 页数：8 Pages

ISC

无锡固电

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features ● Dynamic dv/dt Rating ● Avalanche Rated ● Fast Intrinsic Diode ● Low QG ● Low RDS(on) ● Low Drain-to-Tab Capacitance ● Low Package Inductance Advantages ● Easy to Mount ● Space Savings Applications ● DC-DC Con

文件：131.82 Kbytes 页数：5 Pages

IXYS

艾赛斯