Polar Power MOSFET HiperFET

Polar™ Power MOSFET HiperFET™ N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

文件：150.99 Kbytes 页数：5 Pages

IXYS

艾赛斯

Polar Power MOSFET HiPerFET

Polar™ Power MOSFET HiPerFET™ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • Plastic overmolded tab for electrical isolation • International standard package • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy t

文件：114.99 Kbytes 页数：5 Pages

IXYS

艾赛斯

N通道HiPerFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特

N通道HiPerFET

• 国际标准包装\n• 雪崩评级\n• 较低的QG和RDS(on)\n• 较低的封装电感\n;

Littelfuse

力特