PolarHV HiPerFET Power MOSFET ISOPLUS247

VDSS = 500 V ID25 =24 A RDS(on) ≤ 150 mΩ trr ≤ 200 ns N-Channel Enhancement Avalanche Rated Fast Intrinsic Diode Features International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - I

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IXYS

艾赛斯

N通道HiPerFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特

HiPerFET Power MOSFETs ISOPLUS247 Q-Class

HiPerFET™ Power MOSFETs ISOPLUS247™, Q-Class (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation

文件：58.57 Kbytes 页数：2 Pages

IXYS

艾赛斯

PolarHV HiPerFET Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS = 500 V ID25 = 44 A RDS(on) ≤140 mΩ trr ≤200 ns Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect

文件：301.66 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=44A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.12Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

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ISC

无锡固电