isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=44A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.12Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：367.63 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerRF Power MOSFETs F-Class MegaHertz Switching Single MOSFET Die

Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Features RF Capable MOSFETs Double Metal Process for Low Gate Resistance Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier

文件：99.15 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPer FET Power MOSFETs Q-CLASS

HiPerFET™ Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on)

文件：48.2 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerRF Power MOSFETs F-Class: MegaHertz Switching

文件：131.91 Kbytes 页数：5 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs Q-CLASS

文件：581.16 Kbytes 页数：4 Pages

IXYS

艾赛斯

Switch Mode MOSFETs

·Laser driver, induction heating, switch mode power supplies & switching industrial apps\n·HiperRF MOSFET is ideal for most applications\n·Z-MOS MOSFET reduced capacitance = improved impedance & reduced driver design complexity\n·Two package family options: industry standard (TO-247) & high performa;

Littelfuse

力特

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特