Polar Power MOSFET HiPerFET

Polar™ Power MOSFET HiPerFET™ N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode Features • Fast intrinsic diode • Avalanche Rated • Low RDS(ON) and QG • Low package inductance Advantages • Easy to mount • Space savings • High power density Applications • DC-DC coverters

文件：148.29 Kbytes 页数：5 Pages

IXYS

艾赛斯

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 140A@ TC=25℃ · Drain Source Voltage -VDSS= 300V(Min) · Static Drain-Source On-Resistance -RDS(on) = 24mΩ(Max)@VGS= 10V DESCRIPTION · DC-DC Converters · Motor Drive · Power Switch

文件：355.3 Kbytes 页数：2 Pages

ISC

无锡固电

N通道HiPerFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

Polar™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • Fast intrinsic diode • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Spa

文件：120.93 Kbytes 页数：5 Pages

IXYS

艾赛斯