N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

Polar™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • Fast intrinsic diode • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Spa

文件：120.93 Kbytes 页数：5 Pages

IXYS

艾赛斯

N通道标准MOSFET

• 国际标准包装 \n• 动态dv/dt评级\n• 较低的RDS(on)和Qg\n• 雪崩评级\n• 较低的封装电感;

Littelfuse

力特

N-Channel Enhancement Mode MOSFET

文件：277.25 Kbytes 页数：4 Pages

DACO

罡境电子

Polar Power MOSFET HiPerFET

Polar™ Power MOSFET HiPerFET™ N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode Features • Fast intrinsic diode • Avalanche Rated • Low RDS(ON) and QG • Low package inductance Advantages • Easy to mount • Space savings • High power density Applications • DC-DC coverters

文件：148.29 Kbytes 页数：5 Pages

IXYS

艾赛斯

N-Channel Power MOSFET

DESCRIPTION ·Drain Current –ID= 140A@ TC=25℃ ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 34mΩ(max)@VGS= 10V ·Fast-recovery body diode APPLICATIONS ·DC-DC coverters ·AC and DC motor control ·Battery chargers ·Uninterrupted power supplies

文件：304.23 Kbytes 页数：2 Pages

ISC

无锡固电