DAM140N30C

N-Channel Enhancement Mode MOSFET

IXFK140N30P

N-ChannelPowerMOSFET

DESCRIPTION ·DrainCurrent–ID=140A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=34mΩ(max)@VGS=10V ·Fast-recoverybodydiode APPLICATIONS ·DC-DCcoverters ·ACandDCmotorcontrol ·Batterychargers ·Uninterruptedpowersupplies

IXFK140N30P

PolarPowerMOSFETHiPerFET

Polar™PowerMOSFETHiPerFET™ N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features •Fastintrinsicdiode •AvalancheRated •LowRDS(ON)andQG •Lowpackageinductance Advantages •Easytomount •Spacesavings •Highpowerdensity Applications •DC-DCcoverters

IXFN140N30P

PolarPowerMOSFETHiPerFET

IXFR140N30P

PowerMOSFET

IXFR140N30P

PolarPowerMOSFETHiPerFET

IXFX140N30P

PolarPowerMOSFETHiPerFET

Polar™PowerMOSFETHiPerFET™ N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features •Fastintrinsicdiode •AvalancheRated •LowRDS(ON)andQG •Lowpackageinductance Advantages •Easytomount •Spacesavings •Highpowerdensity Applications •DC-DCcoverters

IXFX140N30P

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=140A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=24mΩ(Max)@VGS=10V DESCRIPTION ·DC-DCConverters ·MotorDrive ·PowerSwitch

IXTK140N30P

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

Polar™PowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Fastintrinsicdiode •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spa