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IXFV22N60PS

PolarHV HiPerFET Power MOSFETs

IXYS

IXYS Integrated Circuits Division

22N60

HEXFETPOWERMOSFET

DESCRIPTION AstheSMPSMOSFET,theUTC22N60usesUTC’sadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)=0.35Ω *UltraLowGateCharge

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

22N60

22A,600VN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

ET-22N60

N-ChannelMOSFET

ESTEKEstek Electronics Co. Ltd

Estek Electronics Co. Ltd

FCA22N60N

N-ChannelMOSFET600V,22A,0.165W

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCA22N60N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=165mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCH22N60N

UltraLowGateCharge(Typ.Qg=45nC),LowEffectiveOutputCapacitance(Typ.Coss.eff=196.4pF)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCP22N60N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCP22N60N

N-ChannelMOSFET600V,22A,0.165W

Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCPF22N60NT

N-ChannelMOSFET600V,22A,0.165W

Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

ICE22N60

N-ChannelEnhancementModeMOSFET

MICROSS

MICROSS

ICE22N60

N-ChannelEnhancementModeMOSFET

ICEMOSIcemos Technology

Icemos 技术

ICE22N60W

N-ChannelEnhancementModeMOSFET

MICROSS

MICROSS

ICE22N60W

N-ChannelEnhancementModeMOSFET

ICEMOSIcemos Technology

Icemos 技术

IRF22N60

N-ChannelPowerMOSFET

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

IRFP22N60K

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.28Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFP22N60K

SMPSMOSFET

Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EnhancedBodyDiodedv/dtCapability Applications •HardSwitchingPrimaryorPFSSwitch •SwitchM

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFP22N60K

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive   Requirement •ImprovedGate,AvalancheandDynamicdV/dt   Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage   andCurrent •EnhancedBodyDiodedV/dtCapability •ComplianttoRoHSDirective2002/95/EC BENEFITS

VishayVishay Siliconix

威世科技

IRFP22N60K

PowerMOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanchevoltage andcurrent •EnhancedbodydiodedV/dtcapability •Materialcategorization:fordefinitionsofcompliance ple

VishayVishay Siliconix

威世科技

IRFP22N60KPBF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive   Requirement •ImprovedGate,AvalancheandDynamicdV/dt   Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage   andCurrent •EnhancedBodyDiodedV/dtCapability •ComplianttoRoHSDirective2002/95/EC BENEFITS

VishayVishay Siliconix

威世科技

详细参数

  • 型号:

    IXFV22N60PS

  • 功能描述:

    MOSFET 600V 22A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IXYS
07+/08+
PLUS-220SMD
86
询价
IXYS
23+
PLUS220SMD
10269
全新原装
询价
IXYS
23+
TO-220
11846
一级代理商现货批发,原装正品,假一罚十
询价
IXYS
19+
PLUS-220SMD
56800
只卖原装正品!价格超越代理!可开增值税发票!
询价
IXYS
23+
PLUSTO-220-SMD
12300
全新原装真实库存含13点增值税票!
询价
IXYS
20+
TO-220
90000
全新原装正品/库存充足
询价
IXYS
22+
PLUS220SMD
9000
原厂渠道,现货配单
询价
IXYS
21+
PLUS220SMD
13880
公司只售原装,支持实单
询价
IXYS
23+
PLUS220SMD
9000
原装正品,支持实单
询价
IXYS
2022+
PLUS-220SMD
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
更多IXFV22N60PS供应商 更新时间2024-5-14 15:30:00