IXFT36N60P

PolarHV HiPerFET Power MOSFET

IXFT36N60P

N通道HiPerFET; • 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感\n;

FCA36N60NF

N-ChannelMOSFET,FRFET

FCA36N60NF

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=34.9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=95mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

FCB36N60N

N-ChannelSupreMOS짰MOSFET600V,36A,90m廓

Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon