N通道沟槽栅 Gen2 MOSFET

• 高电流性能（高达600A）\n• 较低的RDS(ON) 和栅极电荷(Qg)\n• Incorporates Littelfuse HiPerFETTM technology for fast power switching 性能\n• 雪崩功能;

Littelfuse

力特

TrenchT2 HiperFET Power MOSFET

文件：194.29 Kbytes 页数：6 Pages

IXYS

艾赛斯

N-Channel Power MOSFET

DESCRIPTION ·Drain Current –ID= 400A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.3mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·motor drive, DC-

文件：347.76 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 400A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.3mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：371.63 Kbytes 页数：2 Pages

ISC

无锡固电

TrenchT2 HiperFET Power MOSFET

文件：194.29 Kbytes 页数：6 Pages

IXYS

艾赛斯