HiPerFET Power MOSFETs

Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Applications • DC-DC converters • Battery

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IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=90A@ TC=25℃ ·Drain Source Voltage- : VDSS=300V(Min) ·Static Drain-Source On-Resistance : RDS(on) =33mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

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ISC

无锡固电

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

N-Channel Enhancement Mode Power MOSFET

General Features VDS =30V,ID =90A RDS(ON) =4.1mΩ (typical) @ VGS=10V RDS(ON) =5.9mΩ (typical) @ VGS=4.5V High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Sp

文件：421.38 Kbytes 页数：7 Pages

RECTRON

丽正国际

N-Channel Enhancement Mode Power MOSFET

General Features VDS =30V,ID =90A RDS(ON) =4.1mΩ (typical) @ VGS=10V RDS(ON) =5.9mΩ (typical) @ VGS=4.5V High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Sp

文件：446.88 Kbytes 页数：7 Pages

RECTRON

丽正国际