丝印：90N30；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =30V,ID =90A RDS(ON) =4.1mΩ (typical) @ VGS=10V RDS(ON) =5.9mΩ (typical) @ VGS=4.5V High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Sp

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RECTRON

丽正国际

MOSFET

Rectron

丽正国际

N-Channel Enhancement Mode MOSFET

文件：242.81 Kbytes 页数：4 Pages

DACO

罡境电子

N-Channel Enhancement Mode MOSFET

文件：245.53 Kbytes 页数：4 Pages

DACO

罡境电子

300V PDP IGBT

Description Employing Unified IGBT Technology, FGA90N30 provides low conduction and switching loss. FGA90N30 offers the optimum solution for PDP applications where low condution loss is essential. Features • High Current Capability • Low saturation voltage: VCE(sat), Typ = 1.1V@ IC =

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FAIRCHILD

仙童半导体