丝印：90N30；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =30V,ID =90A RDS(ON) =4.1mΩ (typical) @ VGS=10V RDS(ON) =5.9mΩ (typical) @ VGS=4.5V High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Sp

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MOSFET

Rectron

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HiPerFET Power MOSFETs

Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Applications • DC-DC converters • Battery

文件：125.62 Kbytes 页数：4 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs ISOPLUS247

HiPerFET™ Power MOSFETs ISOPLUS247™ (Electrically Isolated Back Surface) Single MOSFET Die Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(

文件：55.15 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs

Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Applications • DC-DC converters • Battery

文件：125.62 Kbytes 页数：4 Pages

IXYS

艾赛斯