| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：90N30；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET GeneralFeatures VDS=30V,ID=90A RDS(ON)=4.1mΩ(typical)@VGS=10V RDS(ON)=5.9mΩ(typical)@VGS=4.5V HighdensitycelldesignforultralowRdson Fullycharacterizedavalanchevoltageandcurrent GoodstabilityanduniformitywithhighEAS Excellentpackageforgoodheatdissipation Sp | RECTRON Rectron Semiconductor | RECTRON | ||
Marking：90N30；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET GeneralFeatures VDS=30V,ID=90A RDS(ON)=4.1mΩ(typical)@VGS=10V RDS(ON)=5.9mΩ(typical)@VGS=4.5V HighdensitycelldesignforultralowRdson Fullycharacterizedavalanchevoltageandcurrent GoodstabilityanduniformitywithhighEAS Excellentpackageforgoodheatdissipation Sp | RECTRON Rectron Semiconductor | RECTRON |
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