丝印：90N30；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =30V,ID =90A RDS(ON) =4.1mΩ (typical) @ VGS=10V RDS(ON) =5.9mΩ (typical) @ VGS=4.5V High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Sp

文件：421.38 Kbytes 页数：7 Pages

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丽正国际

丝印：90N30；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =30V,ID =90A RDS(ON) =4.1mΩ (typical) @ VGS=10V RDS(ON) =5.9mΩ (typical) @ VGS=4.5V High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Sp

文件：446.88 Kbytes 页数：7 Pages

RECTRON

丽正国际