HiPerFAST IGBT with Diode

VCES = 600 V IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Features • International standard packages • High frequency IGBT and antiparallel FRED in one package • High current handling capability • HiPerFASTTM HDMOSTM process • MOS Gate turn-on -drive simplicity Applications • Unin

文件：54.26 Kbytes 页数：2 Pages

IXYS

艾赛斯

PT IGBTs

·VCES: 300V to 1200V \n·IC(90): 2A to 200A \n·High Gain, Low conduction & switching losses. Classes:A2,A3,B2,B3,C2\n and C3 ·A2: DC to 10kHz. B2,B3: 15kHz to 40kHz C2: 40kHz to 100kHz \n C3: 50kHz -150kHz.·A3-Class Polar IGBT/Diode Types, Mid-Frequency Range (15KHz-40KHz)\n C3-300 V IGBT, ;

Littelfuse

力特

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 40A 150W TO247AD

IXYS

艾赛斯

HiPerFAST IGBT with Diode

VCES = 600 V IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Features • International standard packages • High frequency IGBT and antiparallel FRED in one package • High current handling capability • HiPerFASTTM HDMOSTM process • MOS Gate turn-on -drive simplicity Applications • Unin

文件：54.26 Kbytes 页数：2 Pages

IXYS

艾赛斯