GenX3 600V IGBT With Diode

High Speed PT IGBTs for 40-100kHz switching Features ● Optimized for low switching losses ● Square RBSOA ● Anti-parallel ultra fast diode ● International standard packages Advantages ● High power density ● Low gate drive requirement Applications ● High Frequency Power Inverters ● UPS

文件：294.25 Kbytes 页数：7 Pages

IXYS

艾赛斯

PT 高频IGBT

• 高电流处理能力\n• 国际标准包装\n• 针对低导通和开关损耗进行了优化\n• 超快反并联二极管（可选）\n• 雪崩评级\n• 方形RBSOA\n• 300V范围内MOSFET的低成本替代选择\n• MOS栅极开启简单便捷\n• 高频IGBT;

Littelfuse

力特

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 60A 220W TO220AB

IXYS

艾赛斯

GenX3 600V IGBT With Diode

High Speed PT IGBTs for 40-100kHz switching Features ● Optimized for low switching losses ● Square RBSOA ● Anti-parallel ultra fast diode ● International standard packages Advantages ● High power density ● Low gate drive requirement Applications ● High Frequency Power Inverters ● UPS

文件：294.25 Kbytes 页数：7 Pages

IXYS

艾赛斯