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FCB36N60N

N-Channel SupreMOS짰 MOSFET 600 V, 36 A, 90 m廓

Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCB36N60N

N-Channel SupreMOS짰 MOSFET 600 V, 36 A, 90 m廓

Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCB36N60N

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=36A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=90mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCB36N60NTM

N-Channel SupreMOS짰 MOSFET 600 V, 36 A, 90 m廓

Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCA36N60NF

N-ChannelMOSFET,FRFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCA36N60NF

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=34.9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=95mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCP36N60N

N-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCP36N60N

AC-DCPowerSupply

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCP36N60N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCPF36N60NT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=36A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=90mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCPF36N60NT

AC-DCPowerSupply

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IXFH36N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=190mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH36N60P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFK36N60

HiPerFETPowerMOSFET

HiPerFET™PowerMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeet UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpol

IXYS

IXYS Integrated Circuits Division

IXFK36N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK36N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK36N60P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFN36N60

HiPerFETPowerMOSFET

HiPerFET™PowerMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeet UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpol

IXYS

IXYS Integrated Circuits Division

IXFR36N60P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFT36N60P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Integrated Circuits Division

详细参数

  • 型号:

    FCB36N60N

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    N-Channel SupreMOS?? MOSFET 600 V, 36 A, 90 m??

供应商型号品牌批号封装库存备注价格
FAIRCHILD
21+
TO-263
1223
十年信誉,只做原装,有挂就有现货!
询价
Fairchild仙童
23+
TO-2633L(D2PAK)
12300
全新原装真实库存含13点增值税票!
询价
FAI
2017+
TO263
35689
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
FAI
2018+
TO263
6528
只做原装正品假一赔十!只要网上有上百分百有库存放心
询价
FAI
22+23+
TO263
74226
绝对原装正品现货,全新深圳原装进口现货
询价
FAI
1845+
TO263
5790
只做原装!量大可以订货!特价支持实单!
询价
23+
N/A
85400
正品授权货源可靠
询价
FAIRCHILD/仙童
20+
TO-2633L(D2PAK)
36900
原装优势主营型号-可开原型号增税票
询价
FSC
15+PBF
TO-263
800
优势
询价
FAIRCHILD/仙童
21+
TO-263
30000
只做正品原装现货
询价
更多FCB36N60N供应商 更新时间2024-5-3 14:19:00