isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 34.9A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 95mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：347.97 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET, FRFET

文件：269.28 Kbytes 页数：8 Pages

Fairchild

仙童半导体

功率 MOSFET，N 沟道，SUPREMOS®，FRFET®， 600 V，34.9 A，95 mΩ，TO-3P

SupreMOS® MOSFET 是飞兆半导体的下一代高压超级结（SJ）技术，该技术采用区别于传统 SJ MOSFET 产品的深沟槽填充工艺。这项先进技术和精密的工艺控制提供了最低的 Rsp on-resistance（导通电阻规格），卓越的开关性能和耐用性。SupreMOS MOSFET技术适用于高频开关电源转换器应用，如功率因数校正(PFC)、服务器/电信电源、平板电视电源、ATX电源及工业电源应用。SupreMOS FRFET® MOSFET 优化版的本体二极管的反向恢复性能可去除额外元件并提高系统可靠性。 •RDS(on) = 80mΩ （典型值）@ VGS = 10V, ID = 18A\n•超低栅极电荷（典型值Qg = 86nC )\n•低有效输出电容（典型值Coss.eff = 338pF )\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

ONSEMI

安森美半导体

N-Channel SupreMOS짰 MOSFET 600 V, 36 A, 90 m廓

Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on

文件：239.62 Kbytes 页数：8 Pages

Fairchild

仙童半导体

N-Channel SupreMOS짰 MOSFET 600 V, 36 A, 90 m廓

Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on

文件：239.62 Kbytes 页数：8 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 36A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 90mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：333.13 Kbytes 页数：2 Pages

ISC

无锡固电