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IXFP6N120P

Polar HiPerFET Power MOSFET

Polar™HiPerFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicDiode ●LowQG ●LowRDS(on) ●LowDrain-to-TabCapacitance ●LowPackageInductance Advant

IXYS

IXYS Integrated Circuits Division

IXFP6N120P

Power MOSFET

IXYS

IXYS Integrated Circuits Division

DTP6N120SC

1200VN-ChannelSiliconCarbidePowerMOSFET

Features ⚫Highblockingvoltage ⚫Highspeedswitchingwithlowcapacitance ⚫Highoperatingjunctiontemperaturecapability ⚫Veryfastandrobustintrinsicbodydiode Applications ⚫Solarinverters ⚫UPS ⚫HighvoltageDC/DCconverters ⚫Switchmodepowersupplies

DINTEK

DinTek Semiconductor Co,.Ltd

IXFA6N120P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFA6N120P

PolarHiPerFETPowerMOSFET

Polar™HiPerFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicDiode ●LowQG ●LowRDS(on) ●LowDrain-to-TabCapacitance ●LowPackageInductance Advant

IXYS

IXYS Integrated Circuits Division

IXFA6N120P

PowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFH6N120

HighVoltageHiPerFETPowerMOSFET

HighVoltageHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandto

IXYS

IXYS Integrated Circuits Division

IXFH6N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH6N120P

PowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFH6N120P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH6N120P

PolarHiPerFETPowerMOSFET

Polar™HiPerFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicDiode ●LowQG ●LowRDS(on) ●LowDrain-to-TabCapacitance ●LowPackageInductance Advant

IXYS

IXYS Integrated Circuits Division

IXFP6N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTH6N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andHighpowerdensity

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTH6N120

HighVoltagePowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXTT6N120

HighVoltagePowerMOSFET

IXYS

IXYS Integrated Circuits Division

详细参数

  • 型号:

    IXFP6N120P

  • 功能描述:

    MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IXYS
24+
TO-220-3
30000
晶体管-分立半导体产品-原装正品
询价
Littelfuse/IXYS
23+
TO-220
7828
支持大陆交货,美金交易。原装现货库存。
询价
IXYS
23+
TO-220-3
11846
一级代理商现货批发,原装正品,假一罚十
询价
IXYS
20+
TO-220-3
90000
全新原装正品/库存充足
询价
IXYS
21+
TO-220AB
16500
进口原装正品现货
询价
IXYS
1931+
N/A
278
加我qq或微信,了解更多详细信息,体验一站式购物
询价
IXYS
1809+
TO-220
326
就找我吧!--邀您体验愉快问购元件!
询价
IXYS
21+
TO-220
50000
全新原装正品现货,支持订货
询价
IXYS
22+
NA
278
加我QQ或微信咨询更多详细信息,
询价
IXYS
22+
TO2203
9000
原厂渠道,现货配单
询价
更多IXFP6N120P供应商 更新时间2024-5-17 19:03:00