N通道HiPerFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特

Polar Power MOSFET HiPerFET

文件：120.66 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=40A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.23Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：368.3 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFET

DESCRIPTION ·Avalanche Rated ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 230mΩ(Max)@VGS= 10V ·100 avalanche tested APPLICATIONS ·High Power Density ·Easy to Mount ·Space Savings

文件：349.89 Kbytes 页数：2 Pages

ISC

无锡固电

Polar Power MOSFET HiPerFET

文件：124.01 Kbytes 页数：4 Pages

IXYS

艾赛斯