N通道HiPerFET MOSFET

• 国际标准包装 \n• 高电流处理能力\n• 低RDS(on) HDMOS过程\n• 雪崩评级\n• 较低的封装电感\n• 快速本征二极管;

Littelfuse

力特

HiPerFETTM Power MOSFETs ISOPLUS247

文件：34.54 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs

HiPerFETTM Single MOSFET Die Power MOSFETs Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier

文件：110.12 Kbytes 页数：4 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs

HiPerFETTM Single MOSFET Die Power MOSFETs Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier

文件：104.55 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=44A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.13Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：368.02 Kbytes 页数：2 Pages

ISC

无锡固电