HiPerFET Power MOSFETs ISOPLUS247 Q-Class

HiPerFET™ Power MOSFETs ISOPLUS247™, Q-Class (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation

文件：58.57 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs ISOPLUS247, Q-Class

文件：540.23 Kbytes 页数：4 Pages

IXYS

艾赛斯

N通道HiPerFET MOSFET

• 国际标准包装\n• 坚固的多晶硅栅极单元结构\n• 适用于非钳位感应开关（UIS）\n• 快速本征整流器;

Littelfuse

力特

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=48A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.1Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：368.02 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFET Power MOSFETs Q-CLASS

文件：581.16 Kbytes 页数：4 Pages

IXYS

艾赛斯

Power MOSFETs

文件：187.35 Kbytes 页数：2 Pages

SIRECTIFIER

矽莱克电子