HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Back Surface)

(Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOS™ Family Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
Low drain to tab capacitance(

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IXYS

艾赛斯

HiPerFET™ Power MOSFETs ISOPLUS247™

(Electrically Isolated Back Surface)\nN-Channel Enhancement Mode High dV/dt, Low trr, HDMOS™ Family Silicon chip on Direct-Copper-Bond substrate\n-  High  power  dissipation\n-  Isolated  mounting  surface\n- 2500V electrical isolation\n\u0001Low drain to tab capacitance(<35pF)\nLow RDS (on)HDMOS™ process\n\u0001Rugged polysilicon gate cell structure\nUnclamped Inductive Switching (UIS) rated\n\u0;

Littelfuse

力特

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

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IXYS

艾赛斯

HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, Low Qg ,High dv/dt Features IXYS advanced low Qg process International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Fast switching Molding epoxies meet UL 94 V-0 flammability classification

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IXYS

艾赛斯

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：295.27 Kbytes 页数：8 Pages

IXYS

艾赛斯