N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features ● Fast Intrinsic Rectifier ● Avalanche Rated ● Low RDS(ON) and QG ● Low Package Inductance Advantages ● High Power Density ● Easy to Mount ● Space Savings Applications ● Switch-Mode and Resonant-Mode Power Su

文件：306.3 Kbytes 页数：6 Pages

IXYS

艾赛斯

N通道HiPerFET

• 超低通态电阻RDS(ON)和栅极电荷Qg\n• 快速体二极管\n• dv/dt强度\n• 雪崩评级\n• 较低的封装电感\n• 国际标准包装;

Littelfuse

力特

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features ● Fast Intrinsic Rectifier ● Avalanche Rated ● Low RDS(ON) and QG ● Low Package Inductance Advantages ● High Power Density ● Easy to Mount ● Space Savings Applications ● Switch-Mode and Resonant-Mode Power Su

文件：306.3 Kbytes 页数：6 Pages

IXYS

艾赛斯

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features ● Fast Intrinsic Rectifier ● Avalanche Rated ● Low RDS(ON) and QG ● Low Package Inductance Advantages ● High Power Density ● Easy to Mount ● Space Savings Applications ● Switch-Mode and Resonant-Mode Power Su

文件：306.3 Kbytes 页数：6 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：333.41 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：337.68 Kbytes 页数：2 Pages

ISC

无锡固电