Polar HiPerFET Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features ● International Standard Packages ● Dynamic dv/dt Rating ● Avalanche Rated ● Fast Intrinsic Rectifier ● Low QG Applications ● DC-DC Converters ● Battery Chargers ● Switch-Mode and Resonant-Mode Power Supplies

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PolarHV HiPerFET Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features ● International standard packages ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect Advantages ● Easy to mount ● Space savings ● High power density

文件：146.22 Kbytes 页数：4 Pages

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Power MOSFET

文件：260.55 Kbytes 页数：5 Pages

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艾赛斯

PolarHV HiPerFET Power MOSFET

文件：86.45 Kbytes 页数：4 Pages

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艾赛斯

N通道HiPerFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

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力特

PolarHV™ HiPerFET Power MOSFET

N-Channel Enhancement Mode\nAvalanche Rated\nFast Intrinsic Diode ● International standard packages\n● Unclamped Inductive Switching (UIS) rated\n● Low package inductance\n   - easy to drive and to protect\n  \nAdvantages\n● Easy to mount\n● Space savings\n● High power density;

Littelfuse

力特

N通道HiPerFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特