IXFP7N80P

PolarHV HiPerFET Power MOSFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXFP7N80P

Polar HiPerFET Power MOSFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicRectifier ●LowQG Applications ●DC-DCConverters ●BatteryChargers ●Switch-ModeandResonant-ModePowerSupplies

IXFP7N80P

Power MOSFET

IXFP7N80PM

PolarHV HiPerFET Power MOSFET

JCS7N80C

N-CHANNELMOSFET

APPLICATIONS Switchedmodepower suppliesy Electronicballast FEATURES Lowgatecharge LowCrss(typical11.3pF) Fastswitching 100%avalanchetested Improveddv/dtcapability RoHSproduct

JCS7N80CH-O-C-N-B

Electronicballast

JCS7N80FH-O-F-N-B

Electronicballast

JCS7N80H

Electronicballast

JMP7N80A

KF7N80P

NCHANNELMOSFIELD

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES •VDSS=800V,ID