N通道HiPerFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特

PolarHV HiPerFET Power MOSFET

文件：86.45 Kbytes 页数：4 Pages

IXYS

艾赛斯

TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS(on) = 1.0 OHM

TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMO

文件：220.96 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

Advanced Power MOSFET

文件：261.279 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

N-CHANNEL POWER MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 mA (Max.) @ VDS= 800V Low RDS(ON) : 1.472 W(Typ.)

文件：786.17 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体