N-CHANNEL POWER MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 mA (Max.) @ VDS= 800V Low RDS(ON) : 1.472 W(Typ.)

文件：786.17 Kbytes 页数：7 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

文件：280.74 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

Advanced Power MOSFETFEATURES\nAvalanche Rugged Technology\nRugged Gate Oxide Technology\nLower Input Capacitance\nImproved Gate Charge\nExtended Safe Operating Area\nLower Leakage Current : 25 mA (Max.) @ VDS= 800V\nLow RDS(ON) : 1.472 W(Typ.) Avalanche Rugged Technology\nRugged Gate Oxide Technology\nLower Input Capacitance\nImproved Gate Charge\nExtended Safe Operating Area\nLower Leakage Current : 25 mA (Max.) @ VDS= 800V\nLow RDS(ON) : 1.472 W(Typ.)\n ;

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

文件：270.97 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Enhanced mode TO-220F/TO-262 MOSFET

文件：643.13 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

N-Channel Enhancement Mode Mosfet

文件：823.69 Kbytes 页数：9 Pages

YANGJIE

扬杰电子