N通道HiPerFET MOSFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特

PolarHT HiPerFET Power MOSFET

文件：98.5 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=140A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.6mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：312.6 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：309.26 Kbytes 页数：2 Pages

ISC

无锡固电

PolarHT HiPerFET Power MOSFET ISOPLUS247

N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Features • International standard isolated package • UL recognized package • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic diode

文件：144.7 Kbytes 页数：5 Pages

IXYS

艾赛斯