HiPerFET Power MOSFETs Single Die MOSFET

VDSS = 300 V ID25 = 130 A RDS(on) = 22 mΩ trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features International standard packages miniBLOC, with Aluminium nitride isolation Low RDS (on) HDMOS™ process Rugged polysilicon gate cell structure

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IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=130A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(TYP) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION ·motor drive, DC-DC c

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ISC

无锡固电

N通道HiPerFET

• 国际标准包装 \n• 高电流处理能力\n• 低RDS(on) HDMOS过程\n• 雪崩评级\n• 较低的封装电感\n• 快速本征二极管;

Littelfuse

力特

N-Channel Enhancement Mode MOSFET

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DACO

罡境电子