IXFN180N15P

PolarHT HiPerFET Power MOSFET

PolarHT™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackage •EncapsulatingepoxymeetsUL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •Fastrecoverydiode •UnclampedInducti

IXFN180N15P

N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=150A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11mΩ(Max)@VGS=10V APPLICATIONS ·Switching

IXFN180N15P

N通道HiPerFET MOSFET; • 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感\n;

IXFR180N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IXFR180N15P

PolarHVHiPerFETPowerMOSFETISOPLUS247

PolarHV™HiPerFETPowerMOSFETISOPLUS247™(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardisolatedpackage •ULrecognizedpackage •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipa

IXFX180N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=180A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=11mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon