PolarHT HiPerFET Power MOSFET

PolarHT™ HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Fast recovery diode • Unclamped Inducti

文件：151.84 Kbytes 页数：5 Pages

IXYS

艾赛斯

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 150A@ TC=25℃ · Drain Source Voltage -VDSS= 150V(Min) · Static Drain-Source On-Resistance -RDS(on) = 11mΩ(Max)@VGS= 10V APPLICATIONS · Switching

文件：604.2 Kbytes 页数：3 Pages

ISC

无锡固电

N通道HiPerFET MOSFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：330.12 Kbytes 页数：2 Pages

ISC

无锡固电

PolarHV HiPerFET Power MOSFET ISOPLUS247

PolarHV™ HiPerFET Power MOSFET ISOPLUS247™ (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard isolated package • UL recognized package • Silicon chip on Direct-Copper-Bond substrate - High power dissipa

文件：158.44 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=180A@ TC=25℃ ·Drain Source Voltage- : VDSS=150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：367.68 Kbytes 页数：2 Pages

ISC

无锡固电