N通道HiPerFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特

PolarHV HiPerFET Power MOSFET

文件：98.2 Kbytes 页数：4 Pages

IXYS

艾赛斯

PolarHV HiPerFET Power MOSFET ISOPLUS247

文件：155.6 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=32A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.27Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：367.77 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 32A@ TC=25℃ · Drain Source Voltage -VDSS=800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 270mΩ(Max)@VGS= 10V APPLICATIONS · Switching · DC-DC Converters · AC and DC Motor Drives

文件：361.53 Kbytes 页数：3 Pages

ISC

无锡固电