PolarHV HiPerFET Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • Fast intrinsic diode • International standard package • Unclamped Inductive Switching (UIS) rated • UL recognized. • Isolated mounting base Advantages • Easy to mount • Space savings • High power density

文件：162.76 Kbytes 页数：5 Pages

IXYS

艾赛斯

N通道HiPerFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特

PolarHV HiPerFET Power MOSFET ISOPLUS247

文件：155.56 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=80A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =65mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

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ISC

无锡固电

PolarHV HiPerFET Power MOSFET

文件：235.65 Kbytes 页数：5 Pages

IXYS

艾赛斯