N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 40A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 140mΩ(Max)@VGS= 10V APPLICATIONS · Battery Chargers · DC Choppers · Power Factor Correction (PFC) · DC-DC Converters · High Speed Power Switching Application

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ISC

无锡固电

PolarHV HiPerFET Power MOSFET

文件：90.55 Kbytes 页数：4 Pages

IXYS

艾赛斯

N通道HiPerFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特

PolarHV HiPerFET Power MOSFET ISOPLUS247

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IXYS

艾赛斯

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

PolarHV™ HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard packages • Fast recovery diode • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mou

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IXYS

艾赛斯