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IXFN24N100

HiPerRF Power MOSFETs

Features •Internationalstandardpackage •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageindu

IXYS

IXYS Integrated Circuits Division

IXFN24N100

HiPerFET-TM Power MOSFET

Features •Internationalstandardpackage •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageindu

IXYS

IXYS Integrated Circuits Division

IXFN24N100F

HiPerRF Power MOSFETs

Features •Internationalstandardpackage •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageindu

IXYS

IXYS Integrated Circuits Division

IXFN24N100F

HiPerRF Power MOSFETs F-Class: MegaHertz Switching

N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Integrated Circuits Division

IXFN24N100_08

HiPerFET Power MOSFET

IXYS

IXYS Integrated Circuits Division

IXFE24N100

SingleMOSFETDie

HiPerFETPowerMOSFET SingleMOSFETDie Features •ConformstoSOT-227Boutline •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance •FastintrinsicRectifier Applications •DC-DCconverters •Batte

IXYS

IXYS Integrated Circuits Division

IXFF24N100

HiPerFETTMPowerMosfetinHighVoltageISOPLUSI4-PACTM

Features •HiPerFETTMtechnology -lowRDSon -lowgatechargeforhighfrequencyoperation -unclampedinductiveswitching(UIS)capability -dv/dtruggedness -fastintrinsicreversediode •ISOPLUSI4-PAC™highvoltagepackage -isolatedbacksurface -enlargedcree

IXYS

IXYS Integrated Circuits Division

IXFK24N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK24N100

HiPerFETTMPowerMOSFETs

IXYS

IXYS Integrated Circuits Division

IXFK24N100

HiPerRFPowerMOSFETs

HiPerFET™PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancherated •Lowpackageinductance •Fastintrinsicrectifier Applications •

IXYS

IXYS Integrated Circuits Division

IXFK24N100F

HiPerRFPowerMOSFETs

HiPerFET™PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancherated •Lowpackageinductance •Fastintrinsicrectifier Applications •

IXYS

IXYS Integrated Circuits Division

IXFK24N100F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK24N100F

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementModeAvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance

IXYS

IXYS Integrated Circuits Division

IXFR24N100

HiPerFETTMPowerMOSFETsISOPLUS247TM(ElectricallyIsolatedBackSurface)

HiPerFET™PowerMOSFETISOPLUS247™(ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeAvalancheRated Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowdraintotabcapacit

IXYS

IXYS Integrated Circuits Division

IXFR24N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=390mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFX24N100

HiPerFETPowerMOSFETs

IXYS

IXYS Integrated Circuits Division

IXFX24N100

HiPerFETTMPowerMOSFETs

IXYS

IXYS Integrated Circuits Division

IXFX24N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFX24N100F

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementModeAvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance

IXYS

IXYS Integrated Circuits Division

IXFX24N100F

HiPerRFPowerMOSFETs

HiPerFET™PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancherated •Lowpackageinductance •Fastintrinsicrectifier Applications •

IXYS

IXYS Integrated Circuits Division

详细参数

  • 型号:

    IXFN24N100

  • 功能描述:

    MOSFET 1KV 24A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IXFN
23+
NA
5000
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保
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德国IXYS艾塞斯
23+
MOUDLE
12000
原装正品假一罚十支持实单
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IXYS
07+/08+
SOT-227BminiBLOC
54
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IXYS场效应
23+
200
专业模块销售,欢迎咨询
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IXYS
23+
模块
3562
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IXYS
23+
模块
362
全新原装正品,量大可订货!可开17%增值票!价格优势!
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IXYS
23+
模块
402
价格优势/原装现货/客户至上/欢迎广大客户来电查询
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IXYS
2022
SOT-227B
58
原厂原装正品,价格超越代理
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IXYS
23+
模块
5000
原装正品,假一罚十
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IXYS
18+
NA
3000
进口原装正品优势供应QQ3171516190
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更多IXFN24N100供应商 更新时间2024-6-24 9:24:00