HiPerRF Power MOSFETs

Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package indu

文件：105.16 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerFET-TM Power MOSFET

Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package indu

文件：91.67 Kbytes 页数：4 Pages

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艾赛斯

N通道HiPerFET

• 国际标准包装 \n• 高电流处理能力\n• 低RDS(on) HDMOS过程\n• 雪崩评级\n• 较低的封装电感\n• 快速本征二极管;

Littelfuse

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HiPerRF Power MOSFETs

Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package indu

文件：105.16 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerRF Power MOSFETs F-Class: MegaHertz Switching

N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Features • RF capable MOSFETs • Double metal process for low gate resistance • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect

文件：108 Kbytes 页数：2 Pages

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艾赛斯

HiPerFET Power MOSFET

文件：113.92 Kbytes 页数：4 Pages

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艾赛斯

Switch Mode MOSFETs

·Laser driver, induction heating, switch mode power supplies & switching industrial apps\n·HiperRF MOSFET is ideal for most applications\n·Z-MOS MOSFET reduced capacitance = improved impedance & reduced driver design complexity\n·Two package family options: industry standard (TO-247) & high performa;

Littelfuse

力特