HiPerRF Power MOSFETs

Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package indu

文件：105.16 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerRF Power MOSFETs F-Class: MegaHertz Switching

N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Features • RF capable MOSFETs • Double metal process for low gate resistance • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect

文件：108 Kbytes 页数：2 Pages

IXYS

艾赛斯

Switch Mode MOSFETs

·Laser driver, induction heating, switch mode power supplies & switching industrial apps\n·HiperRF MOSFET is ideal for most applications\n·Z-MOS MOSFET reduced capacitance = improved impedance & reduced driver design complexity\n·Two package family options: industry standard (TO-247) & high performa;

Littelfuse

力特

HiPerFETTM Power MOSFETs ISOPLUS247TM(Electrically Isolated Back Surface)

HiPerFET™ Power MOSFET ISOPLUS247™ (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacit

文件：36.22 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 22A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 390mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：330.4 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFET Power MOSFETs

文件：139.35 Kbytes 页数：4 Pages

IXYS

艾赛斯