Isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 94A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =55mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：312.86 Kbytes 页数：2 Pages

ISC

无锡固电

PolarP2 HiPerFET Power MOSFET

文件：136.87 Kbytes 页数：5 Pages

IXYS

艾赛斯

N通道HiPerFET

• 较低的RDS(on)和Qg\n • 低热阻RthJC\n • 高功率耗散\n • 动态dv/dt额定值\n • 雪崩评级;

Littelfuse

力特

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

文件：180.33 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES · Drain Current –ID= 94A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 55mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive · DC-DC converter · Power switch · Solenoid drive

文件：326.44 Kbytes 页数：2 Pages

ISC

无锡固电

PolarP2 HiPerFET Power MOSFET

文件：136.87 Kbytes 页数：5 Pages

IXYS

艾赛斯